Weebit Nano

The company began as a startup in Israel in 2015, founded on the roots of research and patents developed by Professor James Tour of Rice University, with a primary goal of productizing this ReRAM technology.

In 2016 the company successfully merged with Radar Iron of Australia, giving the merged entity the Weebit Nano name trading on the Australian Securities Exchange under the symbol WBT.[4]

In 2016 Weebit Nano and CEA-Leti signed a memory development partnership agreement for the development of ReRAM technologies . Since then, Weebit Nano has been working closely with CEA-Leti on further developments and enhancements to its base ReRAM technologies, where Weebit Nano has commercialization rights to their joint developments. In November 2020 the Weebit/Leti partnership was extended to include further enhancements to Weebit's ReRAM technology, further development of its embedded memory module, and development of a selector for the stand-alone memory market.[5]

David “Dadi” Perlmutter became Chairman of the Board of Directors of Weebit in May 2016.[6]

In October 2017 Coby Hanoch joined the company as the CEO.[7]

In November 2018, Weebit announced it was working with the NonVolatile Memory Research Group of the Indian Institute of Technology Delhi (IITD) on a project to research the use of Weebit’s ReRAM technology for certain types of neuromorphic applications –used for artificial intelligence .

In January 2019, Weebit announced its collaboration with a team at the Politecnico di Milano in Italy, to test, characterize and implement its developed algorithms using Weebit’s ReRAM. The goal of the project is to demonstrate the capability of ReRAM-based hardware in neuromorphic and artificial intelligence applications.[8]

In February 2019, Weebit and the Technion – Israel Institute of Technology announced a collaboration to examine the possible use of ReRAM devices in a novel computing architecture that could speed up processing, memory transfer rate and memory bandwidth and decrease processing latency – while using less power.[9]

In December 2019, XTX Technology and Weebit, verified the technical parameters of Weebit’s ReRAM array in XTX’s own labs. XTX successfully confirmed measurements on Weebit’s NVM that were previously achieved at French research institute Leti.[10]

In February 2020, Weebit signed a Letter of-Intent with SiEn (QingDao) Integrated Circuits Co., Ltd. (SiEn) to jointly investigate ways in which Weebit’s technology can be used in SiEn’s products.[11]

In October 2020, Weebit, together with Leti, completed its technology stabilization process so that its technology is now ready for transfer to a production fab.[12]

In September 2021, Weebit and SkyWater Technology announced an agreement to take Weebit’s ReRAM to volume production.[13] As part of the agreement, SkyWater has licensed Weebit’s ReRAM technology to use as embedded Non-Volatile Memory in customer designs.[14]

In September 2021, Weebit, together with Leti, produced, tested and characterized fully functional 1 Mb ReRAM arrays in a 28nm FDSOI process on 300mm wafers.[15]

Weebit Nano produces resistive random-access memory(ReRAM) which is a specialized type of random-access memory that maintains its state (and data) even if the device loses power. ReRAM is used in specialized environments where data must be preserved despite environmental challenges, such as aerospace, transportation and medical environments. There are two primary types of ReRAM, Conductive Bridge ReRAM (CBRAM) and Oxygen Vacancy ReRAM (OxRAM). Weebit Nano has productized OxRAM in its designs, and OxRAM is generally viewed to have better retention properties compared to CBRAM.[16]

When fabricating the semiconductor wafers, memory technologies can be integrated during the ‘front-end-of-line’ (FEOL) process which happens in the early phase or later in the later phases during the back-end-of-line (BEOL) process. Weebit Nano’s ReRAM can be more easily integrated into fabrication flows because it happens during the later BEOL layers instead of the earlier FEOL layers. There are two primary technologies that are used to fabricate transistors onto wafers, bulk CMOS and FD-SOI. Weebit Nano utilizes the CMOS-compatible process where the materials enable rapid development and integrating into any fab through the most common deposition techniques and tools.[17]

Since 2016, Weebit Nano has collaborated on developing ReRAM technologies with CEA-Leti of France, one of the largest nanotechnology research institutes in Europe.[18] The two organizations have collaborated on the 40nm and 130nm technology nodes.[19]

Weebit and Leti have also shown a neuromorphic demo for Artificial Intelligence (AI) inference tasks where memory circuits are meant to mimic the actions of a human brain. The areas of focus for CEA-Leti and Weebit Nano as of November 2020 are around further enhancements to Weebit’s ReRAM technology.[20]

Other key technical milestones include:

• November 2017 production of working 40nm SiOx RRAM cell samples, with measurements performed on those cells on various wafers verifying the ability of its memory cells to maintain their memory behavior. [21]
• June 2018 demonstration of a working 1Mbit ReRAM array manufactured using a 40nm process technology[22]
• August 2018 production of the first packaged units containing memory arrays based on Weebit’s ReRAM technology[23]
• February 2020 demonstration of Spiking Neural Network using ReRAM[24]
• October 2020 completion of the technology stabilization process so that Weebit’s technology is ready for transfer to a production fabrication plant.[12]